The new circuit design of operational amplifiers with input field-effect JFets, as well as input CMOS transistors and a special transient correction circuit is considered, providing increased values of the maximum slew rate of the output voltage (SR, up to 800-1000 ~V / μ s) in large-signal mode. The proposed opamp circuits have a high input resistance due to the use of field-effect transistors and are characterized by low static current consumption. The results of computer simulation of micropower op amps in the LTspice and Orcad environments for micron technological processes are presented.
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Butyrlagin et al. (2024) studied this question.
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