Micro light‐emitting diodes (µLEDs) have been considered as next‐generation display technologies, but they suffer from low productivity due to poor heat dissipation, high electrical resistance, and repair difficulty of conventional µLED bonding methods. Simultaneous transfer and bonding (SITRAB) technology enables electrically/thermally conductive soldering for high‐resolution µLED displays. In this study, the transfer, bonding, and repair of InGaN/GaN µLEDs via the SITRAB method are reported. µLEDs grown on sapphire substrates are assembled on a backplane via the SITRAB process. The SITRAB‐based repair of defective pixels is demonstrated by transferring redundant LEDs to the display substrates.
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Shin et al. (2024) studied this question.
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