Fusion and hybrid wafer-to-wafer bonding are key enabling processes for device scaling and wafer level packaging. Shrinking technology nodes combined with raising wafer complexities require a profound investigation of the bonding mechanism. This paper presents a multiphysics model for the wafer-to-wafer fusion bonding process. The novelty and capability of the model is the 3D representation of the full process including the multiscale phenomena. Validation data with particular emphasis on the bond wave dynamics is shown. The applicability of the model is confirmed by the comparison of in situ bond wave monitoring and resulting bonding distortion.
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Mühlstätter et al. (2024) studied this question.
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