The current study introduces the design and sim-ulation of a comprehensively integrated dual-band Doherty power amplifier (DPA), which employs Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) technology for its fabrication. A specialized output matching network is designed for the carrier path to achieve dual-band Doherty operation. The overall circuit consists of a Wilkinson power divider, input matching networks, active devices and an output matching network and a phase shifter, all integrated onto a chip with a dimension of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2.60× 3.05mm²</tex> . The fabricated DPA demonstrates operation at 3.5 GHz and 4.85 GHz with 6 dB high-efficiency power range. Following electromagnetic(EM) simulation, the designed DPA achieves a output back-off (OBO) drain efficiency exceeding 42%, a saturated drain efficiency exceeding 53%, and a peak output power of 37.5 dBm.
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Liu et al. (2024) studied this question.
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