This paper presents a highly efficient and linear Doherty power amplifier targeting base station applications for the fifth-generation (5G) communication systems. With the adoption of self-packaged <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.25-μ m</tex> GaN/SiC high-electron mobility transistors (HEMTs), a quasi-Doherty power amplifier (P A) featuring an operating frequency from 3.4-3.6 GHz was realized. The fabricated P A delivered a saturated output power <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">(Pₛₐₜ)</tex> of 50.5 dBm, and a peak power-added-efficiency (P AE) of 60.6% while excited by continuous-wave (CW) signal at 3.5 GHz, respectively.
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Tsao et al. (2024) studied this question.
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