Nowadays, there is a panel of radio-frequency Power Amplifiers (PA) designed with various techniques and for different applications as they are required to amplify a signal. This paper presents the design of a Power Amplifier, based on a GaN HEMT transistor, that can operates in class AB and at an S-band frequency of 3 GHz. This frequency is suitable for weather radar applications. GaN technology is on the rise due to its properties, such as its ability to work at high frequencies. The proposed Power Amplifier matching networks were designed with microstrip lines by using a simple impedance transforming line, whose characteristics were calculated before simulations on ADS (Advanced Design System) and achieve a good matching. The fabricated device reached an output power of 41.23 dBm, and a maximum gain of 11.76 dB.
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Atchike et al. (2024) studied this question.
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