Design of GaN HEMT Class AB Amplifier at 4.48 GHz for 5G Connectivity

In today's radar and telecommunication setups, power amplifiers stand as the vital engine within the RF chain, to boosts efficient signal transmission. Power amplifiers are engineered with the purpose of enhancing radio signals to reach optimal power levels necessary for transmission via wired or wireless mediums. But as it consumes more power and shows non-linear characteristics, and efficiency for transforming DC supply power into RF output power also need to be boosted. The Gallium Nitrate High Electron Mobility Transistor (GaN HEMT) Class AB power amplifier with significant efficiency to cater to cellular needs within the sub-6 GHz lower frequency band. The class AB amplifier at 4.48 GHz is designed, stimulated, and analyzed using Advanced Design Systems (ADS) software for small and large signal measurements and it was inferred for the input power of 24 dBm, the gain is 12 dB, the output power is 38.5241 dBm, and PAE is 51.080 %.