Optimization of FINFET Single Diffusion Break Structure Profile

FIN recess profile of single diffusion break devices is optimized to resolve one of the middle of line challenges- unlanded trench silicide. Results show improvement in wafer edge yield, particularly for that of small die products. Alongside with yield improvement, e-beam defect inspection was fine tuned to detect such defects in the logic area early in the line, as soon as middle of line (MOL) contacts were fabricated. All these developments help to lower wafer scraps at the end of line and to improve fab economy.