Protocol for Thermal Donors Monitoring in High Resistivity Silicon Wafers

A monitoring protocol for 300mm high-resistivity Czochralski silicon (Cz-Si) wafers after optimized thermal treatments, is presented. It is based on the combination of several metrology techniques. Having such a methodology is important as oxygen-related defects called Thermal Donors (TD) formed during 450°C anneals are electrically active in various types of substrates: n-type used typically in InsulatedGate Bipolar Transistors (IGBT) and p-type used for example in Radiofrequency (RF)-based technologies. We show that such TDs result in resistivity loss, confirming their detrimental impact on devices performances.