Experimental study reveals structural defects and warpage in arsenic-implanted silicon wafers subjected to rapid thermal annealing, highlighting processing limits for semiconductor fabrication.
In this study, 150 mm diameter p-type (100) silicon wafers (with no screen oxide) were implanted in a batch implanter with 5*10 15 cm -2 of arsenic at 80 keV. After implantation the wafers were subjected to rapid thermal annealing for 10 s at temperatures: wafer warpage measurements, optical imaging inspection (magic mirror method), X-ray transmission topography and thermal wave modulated optical reflectance. This paper summarises the measured results of wafer defects and damage due to the rapid thermal processing.
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Hahn et al. (1992) studied this question.
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