In this paper, the 5.8 GHz band 1 W rectifier with low threshold voltage GaAs gated anode diodes (GADs) is demonstrated for extension to low power operation. The GaAs GAD has an advantage of controllability on threshold voltage. This enables low threshold voltage of GaAs GAD that is similar value as a Si SBD. In the developed 5.8 GHz band 1 W rectifier, measured rectification efficiency of 77 % at input power of 30 dBm is obtained. At input power of 10 dBm, efficiency is 56 % that is extreme higher value than those of 1 W class rectifiers. It is clarified that low threshold voltage GaAs GAD is effective for rectification in high dynamic range.
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Hirose et al. (2024) studied this question.
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