A high-power RF-to-DC rectifier applied to wireless power transfer (WPT) with ultra-wide input power dynamic range is proposed in this paper. A GaN (gallium nitride) HEMT (high electron mobility transistor) is utilized to realize rectification at high power up to 12 W and a Schottky diode is used for lower-power rectification. Excellent switching between the two circuits' rectification modes is achieved by adding a circulator. The rectifier has a 30 dB dynamic range with an efficiency of over 50% at 2.4 GHz.
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Yu et al. (2024) studied this question.
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