A High Efficient Solid State Power Amplifier at 3.5 GHz for Wireless Communication

This paper outlines the development of a class-AB power amplifier operating at a frequency of 3.5GHz, prioritizing high efficiency. It utilizes the Cree transistor CG2H40010F GaNHEMT, known for delivering up to $62 %$ drain efficiency. To strike a balance between maximum power-added efficiency and output power across the desired bandwidth, matching networks are employed. A parallel RC network is implemented at the gate terminal to enhance stability while maintaining gain. Input and output matching networks are also utilized to match impedance, and the circuit is optimized to achieve high power-added efficiency, output power, and gain. The designed power amplifier offers an output power of 10.334 ~W, a power-added efficiency of $50 %$, and a drain efficiency of $61 %$.