Multifunctional Device With Switchable Hysteresis Direction Based on Multilayer rMoS2

Abstract Recent advancements in 2D ferroelectric materials have enabled significant progress in electronic and optoelectronic devices. However, most studies have focused on single‐function implementations, lacking the flexibility to switch between multiple functionalities. In this work, a multifunctional device based on a multilayer rhombohedral molybdenum disulfide (rMoS 2 )/hexagonal boron nitride (h‐BN) heterostructure is presented with electrically tunable hysteresis direction, integrating two operational modes: (1) Ferroelectric semiconductor field‐effect transistor (FeSFET) and (2) Ferroelectric‐Floating gate field‐effect transistor (Fe‐FGFET). The designed dual‐mode device exhibits optoelectronic programmability, achieving more than 4‐bit conductance states with a retention time of exceeding 120s. The system performance remains stable through 100 consecutive program/erase cycles with <1% conductance drift. Furthermore, synergistic electrical‐optical modulation enables the emulation of biological synaptic functions, including the transition from short‐term to long‐term potentiation with tunable retention, and paired‐pulse facilitation (PPF). These results establish multilayer rMoS 2 as a promising candidate for multifunctional electronics, providing enhanced flexibility and potential for integrated multifunctional applications, while paving the way for the development of advanced ferroelectric devices leveraging 2D ferroelectrics.