Performance evaluation of polycrystalline Si1−xGex thin-film transistors fabricated by continuous-wave laser lateral crystallization on glass substrates

This study was aimed at elucidating the performance of continuous-wave laser lateral-crystallized (CLC) polycrystalline Si 1−x Ge x (poly-Si 1−x Ge x ) thin-film transistors (TFTs). The transfer characteristics of the n-ch CLC poly-Si 1−x Ge x TFTs (x = 0, 0.05, 0.1, and 0.3) exhibited a positive shift in the threshold voltage (V th ) with increasing Ge content. Furthermore, the off-current in the p-ch CLC poly-Si 0.9 Ge 0.1 TFTs decreased with decreasing film thickness. These properties of the CLC poly-Si 1−x Ge x TFTs can be attributed to the generation of acceptors and increment of gate SiO 2 /poly-Si 1−x Ge x interface charge state with increasing Ge content. The generation of acceptors was also supported by Hall effect measurements. In addition, the thermal stability of acceptors up to 700 °C was elucidated through Hall effect measurements and TFT performance evaluations. Furthermore, we examined the origins of these acceptors. This experiment highlighted the sensitivity of Si 1−x Ge x to Ge incorporation, even in small amounts.