Based on uncooled infrared microbolometer focal plane array technology, an uncooled THz microbolometer detector with 25um pixel pitch and 160×120 array size was developed. The CTIA read-out integrated circuit was designed and manufactured with 0.25um standard CMOS process. The resonant cavity height of the micro-bridge pixel was increased from about 1.5um to about 23um to enhance the absorption in the THz wavelengthes. The increased resonant cavity height was realized with tungsten plug and CMP process above the aluminum reflector. The THz detector was packaged with ceramic hermetic package, a parylene coating was developed on high resistivity silicon window to increase the THz transmission. The developed THz detector was applied in beam profiling of QCL, LN crystal sources etc.
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Luo et al. (2024) studied this question.
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