FDSOI transistor-based uncooled microbolometer: demonstration of a 12µm pixel sensitive to IR flux

As uncooled microbolometer market grows, there is a need for cost-reduced detectors with the right performance level for the considered market. CMOS devices as transistors or diodes are therefore promising alternatives to standard thermistor materials of microbolometers. In this context CEA LETI developed a 12μm pitch proof of concept of a FDSOI transistor-based microbolometer suspended pixel. The suspended pixel is realized with a 3D integration technological process. This proof of concept aims to validate the technological process by demonstrating pixel capacity to be sensitive to the infrared ux. This work reports details on technological process, electro-optical measurements and discussion on achievable performances.