Utilizing the Janus MoSSe surface polarization in designing complementary metal-oxide-semiconductor field-effect transistors

Janus transition metal dichalcogenides (JTMDs) have attracted much attention because of their outstanding electronic and optical properties.The additional out-of-plane dipole in JTMDs can form n-and p-like contacts, and this may be used in device applications, such as pin diodes and photovoltaic cells.In this study, we exploit this property to design n-and p-type metal-oxide-semiconductor field-effect transistors (MOSFETs).First, we use density-functional-theory calculations to study the inherent dipole field strength in the trilayer JTMD MoSSe.The intrinsic dipole of MoSSe causes band bending at both the metal/SMoSe and SMoSe/metal interfaces, resulting in electron and hole accumulation to form p-type, n-type, and even Ohmic contact regions.We incorporate this property into a two-dimensional finite-element-based Poisson-drift-diffusion solver to perform simulations, based on which we design complementary MOSFETs.Our results demonstrate that JTMDs can be used to make n-and p-MOSFETs in the same layer without the need for any extra doping.