Localized Oxygen Plasma Interface Engineering for 1T′/2H-MoTe ₂ Heterostructure Dual-Gate Bidirectional Junction Field-Effect Transistors

Bidirectional junction field-effect transistors (B-JFETs) are promising candidates for hardware-efficient logic integration; however, they often suffer from asymmetric threshold voltages and degraded subthreshold swing (SS). This work demonstrates a dual-gate-regulated B-FET based on a 1T′-MoTe2/2H-MoTe2 van der Waals (vdW) heterostructure. By synergistically modulating the built-in electric field via top and bottom gates, we achieve reversible n/p-type conduction. Leveraging the high conductivity of 1T′-MoTe2, localized oxygen plasma (OP) treatment for ohmic contacts, and the energy-band tunability of 2H-MoTe2, the device optimizes both SS and switching ratios for n/p-modes. Dual-gate-induced dynamic charge modulation inverts the built-in electric field at the Schottky junction, effectively eliminating the threshold mismatch common in conventional heterojunction devices. Reconfigurable circuits employing these transistors exhibit robust complementary logic functionality, enabling dynamic switching between multiple logic gates through dual-gate voltage programming. This study provides critical insights into polarity modulation and reconfigurable logic design for two-dimensional (2D) heterojunction devices, offering a path toward low-power, high-density integrated logic systems.