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April 22, 2024Semiconductor Science and TechnologyOpen Access

Carrier mobility dependence of indium antimonide-bismide on carrier concentration, temperature, and bismuth composition grown on semi-insulating gallium arsenide substrate

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WLWan Khai LokeNational University of SingaporeKTKian Hua TanCentre National de la Recherche ScientifiqueSWSatrio WicaksonoNational University of Singapore

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Loke et al. (2024) studied this question.

synapsesocial.com/papers/68e6e1f0b6db64358765dd98https://doi.org/10.1088/1361-6641/ad416f
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Also Consider

Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Carrier mobilities in silicon empirically related to doping and field1967 · 1,734 citations
  2. 2Electron transport mechanism in gallium nitride1993 · 161 citations
  3. 3Electron mobility in n-InSb from 77 to 300K1975 · 15 citations