8-inch GaN Power Transistor Technology Using a Si-compatible Fab Facility

GaN-based transistor technologies have evolved from research laboratory explorations to a commercial-grade manufacturing platform in recent years. These technology platforms are providing promising energy-efficient applications, in particular with the development of GaN high-electron-mobility transistors (HEMTs) for power switching circuits. These transistors have enabled new solutions to a wide ranges of frequency spectrum as well as power ratings in both RF and power switching systems. Although superior device performance of GaN HEMTs was well recognized, wide acceptance of this technology falls back to a basic consideration of the cost vs. performance competitiveness. Naturally, an increase of the wafer size is an effective way to achieve a lower manufacturing cost. In the case of GaN HEMT manufacturing, it inevitably requires new development hurdles to address fundamental material limitations. New engineering solutions ensued, and GaN HEMT manufacturing in an 8-inch fab has become possible in recent years, with success. This talk will present the progress of 8-inch GaN HEMT technology and discuss the feasibility of GaN HEMTs' expanding application space in advanced power electronic systems.