Back-end-of-line devices need amorphous dopable bipolar oxide semiconductors. However, p-type oxides are rare due to self-compensation by native defects. Our simulations find that <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TeO₂</tex> does not self-compensate, and its amorphous phase is chemically ordered and uses low-cost materials.
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Robertson et al. (2024) studied this question.
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