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Good bonding force of Blind Micro Vias(BMV) can effectively avoid electrical defect in the connection between the chip and substrate, including device, open issue and functional fail issue. The main objective of this research is to propose a methodology to enhance target copper/ electroless plating copper (E'less copper)/ plating copper (Cu/Cu/Cu) interconnections by increasing etching amount (EA) and annealing through DOE test, including the EA of target copper, and increasing annealing after plating copper. Among them, increasing appropriate EA of target copper before electroless plating copper and additional annealing condition was set, the bonding force enhancement was revealed, which can be increased 14% bonding force by quick via pull (QVP) and FE-SEM also show Cu/Cu/Cu interconnections unhindered recrystallization. The study result sheds light in improving the BMV bonding force and also reliability verification passed by MSL3A+TCC3000.
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Chen et al. (2024) studied this question.
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