Wafer-scale Deep UV Si Photodiodes Based on Ultra-shallow Junction

This is the authors' abstract. We don't add key points for this paper.

In this Letter, we employed atomic layer deposition (ALD) and flash lamp annealing (FLA) to form a wafer-scale ultra-shallow junction (USJ, ~5 nm) in silicon. The deep ultraviolet light is almost completely absorbed in the PN junction depletion region near the surface, resulting in a high collection efficiency of photogenerated carriers. The junction-based photodiode exhibits outstanding performances with internal quantum efficiency reaching ~95% from 200 nm to 400 nm and a linear response to the UV light within a wide range of 0.4-10 3 μW.