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April 15, 2024Open Access

On the experimental properties of the TS defect in 4H-SiC

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Authors

JLJohannes A. F. LehmeyerAFAlexander FuchsZLZhengming Li

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Lehmeyer et al. (2024) studied this question.

synapsesocial.com/papers/68e6f2aeb6db64358766dc63https://doi.org/10.48550/arxiv.2404.09618
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