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Optical-grade BaTiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> has been epitaxially integrated on silicon wafers by off-axis sputtering. We find that for films with in-plane ferroelectric polarization, the as-grown domain structure results in an initially reduced effective electrooptic response that can be "woken up" by sufficient poling.
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Posadas et al. (2024) studied this question.
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