Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
September 10, 2025Applied Physics Letters

Crystal domain orientation control of epitaxial BaTiO3 films integrated on silicon for large electro-optic response

View Full Paper
Ask AI
Bookmark
Share

Authors

HKHeungsoo KimSMScott A. MathewsJTJason P. Tischler

Discussion

Loading...

Member takes

Overview

Epitaxial growth of BaTiO3 films shows enhanced electro-optic response, highlighting the influence of domain orientation.

Key Points

  • The electro-optic response of BaTiO3 films depends significantly on their domain orientations and thickness.
  • Adjusting oxygen pressure and substrate temperature allows the growth of preferred a-oriented BaTiO3 films.
  • An effective Pockels coefficient of up to 432 pm/V was achieved with 500 nm thick BaTiO3 films.
  • These findings indicate the potential of BaTiO3 films for integrated silicon photonic devices.

Cite This Study

Kim et al. (2025) studied this question.

synapsesocial.com/papers/68c1b82654b1d3bfb60ec918https://doi.org/10.1063/5.0281487
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Electrical, optical, and structural properties of indium–tin–oxide thin films for organic light-emitting devices1999 · 1,283 citations
  2. 2Enhancement of Ferroelectricity in Strained BaTiO <sub>3</sub> Thin Films2004 · 1,949 citations
  3. 3Epitaxial growth and strain relaxation studies of BaTiO3 and BaTiO3/SrTiO3 superlattices grown by MBE on SrTiO3-buffered Si(001) substrate2019 · 22 citations
  4. 4Strain Tuning of Ferroelectric Thin Films2007 · 1,162 citations
  5. 5Integration of ferroelectric BaTiO3 with Ge: The role of a SrTiO3 buffer layer investigated using aberration-corrected STEM2017 · 6 citations