A TCAD to SPICE Framework for Isolation of BTI and HCD in GAA-SNS FETs and to Estimate Impact on RO Under Normal and Overclocking Conditions

Sentaurus TCAD is enabled to simulate parametric shift due to BTI and HCD in p- and n- GAA SNS FETs. The framework is calibrated using ultra-fast measured BTI kinetics at different V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</inf> and T, and HCD kinetics at different V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</inf> and V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</inf> during and after stress. The isolated contributions due to BTI and intrinsic HCD are used in a cycle-by-cycle circuit simulation framework to determine Ring Oscillator (RO) degradation at various V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DD</inf> and T. Inverter-based RO under Dynamic Voltage and Frequency Scaling (DVFS) conditions are simulated by the circuit aging framework to demonstrate the necessity of cycle-by-cycle analysis. The End-of-Life (EOL) degradation of device and RO are compared.