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ADC circuits may cause RTS column signatures in 3D stacked CMOS image sensors. This work proposes a statistical and design evaluation of RTS for 40nm node devices, used in ADC circuits. A transistor array mimicking 3T CIS pixel array architecture is used for RTS characterization, with a proposed RTS detection methodology and counting. The designs presented exhibit a noteworthy decrease in the number of RTS occurrences, as evidenced by the experimental results.
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Cunha et al. (2024) studied this question.
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