Assessing Non-Conducting Off-State Induced Hard Breakdown for PD-SOI MOSFETs using an RF Measurement Technique

We present a methodology to assess the damage on MOSFETs after non-conducting off-state induced hard breakdown. It is based on a straightforward inspection of experimental S-parameters under common-source and common-drain configurations at zero bias, which allows to identify the location of the damage evidenced by asymmetry in the electrical response. Thus, neither model implementations nor conversions to either Z or Y parameters are required, which eases the detection of device damage even during the measurement session. Furthermore, the technique is compatible with radiofrequency two-port test fixtures exhibiting one of the terminals tied to ground, such as those used for characterizing microwave devices. Using the technique, two different breakdown mechanisms are observed in the transistors.