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The study aims to derive a novel method to extract off-state small-signal equivalent circuit parameters for body-contact PD-SOI MOSFETs.

A Novel Parameter Extraction Technique for Off-state Equivalent Circuit Model of Body-Contact PD-SOI MOSFETs

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Novel technique directly extracts parameters in body-contact PD-SOI MOSFETs, simplifying measurements and enhancing accuracy.

The study aims to derive a novel method to extract off-state small-signal equivalent circuit parameters for body-contact PD-SOI MOSFETs.
Developed extraction equations based on Y-parameter equations for both low and high frequencies.
Utilized a single S-parameter measurement for parameter extraction.
Compared extracted model with measured S-parameters over a wide bias and frequency range.
The new technique demonstrated excellent agreement with measured S-parameters.
Successful extraction from 100 MHz to 40 GHz frequency range.
Simplified process compared to conventional methods requiring multiple test patterns.

Yi et al. (2026) studied this question.

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View Full Paper

Ask AI

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Authors

Novel technique directly extracts parameters in body-contact PD-SOI MOSFETs, simplifying measurements and enhancing accuracy.

The study aims to derive a novel method to extract off-state small-signal equivalent circuit parameters for body-contact PD-SOI MOSFETs.
Developed extraction equations based on Y-parameter equations for both low and high frequencies.
Utilized a single S-parameter measurement for parameter extraction.
Compared extracted model with measured S-parameters over a wide bias and frequency range.
The new technique demonstrated excellent agreement with measured S-parameters.
Successful extraction from 100 MHz to 40 GHz frequency range.
Simplified process compared to conventional methods requiring multiple test patterns.

Yi et al. (2026) studied this question.

View Full Paper

Ask AI

Bookmark