We propose a robust dynamic spectroscopic imaging ellipsometer (DSIE) as a future high-throughput full pattern wafer inspection candidate in semiconductor MI fields. In this study, we demonstrate a Linnik-type monolithic polarizing interferometer scheme combined with a simple spectrometer-based compensation channel can enhance system robustness and stability drastically. Also, we address the importance of the global mapping phase error compensation method by which highly reliable 3-D cubic spectroscopic ellipsometric parameter mapping capability can be provided for a large-scale specimen. To show the efficacy of the proposed compensation method experimentally, we measure a 12-inch full size silicone-dioxide thin film and a 8-inch nano-pattern wafer in a general environment where various external disturbances can affect the system stability.
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Hwang et al. (2024) studied this question.