A Novel Enhancement Mode GaN HEMT with MIS and p-GaN structure

This paper reports a novel enhancement mode GaN HEMT designed to mitigate gate leakage current. The device combines a p-GaN layer with HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> layer beneath the metal. The p-GaN layer acts as a barrier, diminishing tunneling, while HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> exhibits fewer trap sites compared to SiN, resulting into reduced gate leakage current. Moreover, the proposed device achieves improved gate leakage current, maximum drain current and threshold voltage compared to the devices in the already reported literature.