Magnetotransport properties of epitaxial films and Hall bar devices of the correlated layered ruthenate Sr3Ru2O7

For epitaxial Sr₃Ru₂O₇ films grown by pulsed laser deposition, we report a combined structural and magnetotransport study of thin films and Hall bar devices patterned side-by-side on the same film. Structural properties of these films are investigated using x-ray diffraction and high-resolution transmission electron microscopy, and confirm that these films are epitaxially oriented and nearly phase pure. For magnetic fields applied along the c axis, a positive magnetoresistance of 10% is measured for unpatterned Sr₃Ru₂O₇ films, whereas for patterned Hall bar devices of channel widths of 10 and 50.16em0exm, magnetoresistance values of 40% and 140% are found, respectively. These films show switching behaviors from positive to negative magnetoresistance that are controlled by the direction of the applied magnetic field. The present results provide a promising route for achieving stable epitaxial synthesis of intermediate members of correlated layered strontium ruthenates, and for the exploration of device physics in thin films of these compounds.