Engineering Hall Resistivity Anomalies in Epitaxial SrRuO ₃ Thin Films by Mo Doping

This is the authors' abstract. We don't add key points for this paper.

Magnetic transport properties are essential for probing the interaction between charge and spin dynamics. Those include the anomalous Hall effect (AHE) and topological Hall effect (THE), which are useful in the development of spintronic devices. SrRuO 3 (SRO) offers an ideal platform for investigating the Hall effect, induced by robust ferromagnetism, and can be further manipulated by tuning the spin–orbit-coupled band structure near the Fermi level. In this study, we investigated how Mo doping enhances Hall resistivity (ρ xy ), along with the emergence and engineering of the hump anomaly in ρ xy of epitaxial SRO thin films. The tunable hump anomaly was attributed to the multi-domain AHE model based on spatial inhomogeneities and k -space Berry curvature. Our results present the underlying mechanism of hump formation and provide a feasible approach for enhancing the AHE of SRO films to boost the controllability of spintronic devices.