Non-exponential transients and the evaluation of stress in (disordered) organic thin film transistors

In this work, the transient techniques for disordered organic thin film transistors are analyzed. A special emphasis is made on stress. Stress in this work is the continuous increase of the threshold voltage upon applying a gate bias. In this work a new stress evaluation method is presented that allows for a rapid determination of stress. Moreover, a figure-of-merit is proposed that can be applied to non-exponential transients, including those of stressing. The transients are compared to the empirical transient functions reported in literature that range from power-law to stretched exponential and logarithmic.