A Semiempirical Physics-Based Model for Threshold Voltage Degradation in Amorphous InGaZnO Thin-Film Transistors under Linear and Saturation Stress Conditions

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This study introduces a semiempirical physics-based model for threshold voltage shift (ΔVth) in amorphous InGaZnO thin-film transistors subjected to linear and saturation stress conditions, accounting for the interactions of ionized oxygen vacancy (VO2+) redistribution, self-heating (SH) effect, and hot-carrier (HC) effect. Under linear stress, uniform vertical electrical fields cause dominant negative ΔVth by enhancing VO2+ migration, which is exacerbated by SH. In saturation, field reversal close to the drain suppresses VO2+, and localized SH mitigates HC, which leads to a large decrease in degradation. The total ΔVth is the sum of stretched-exponential VO2+ and power-law HC contributions. The kinetics depends on temperature and is affected by channel fields and power dissipation.