18‐4: Mechanical Stress‐Induced Recoverable and Unrecoverable Deteriorations of Flexible a‐InGaZnO Thin‐Film Transistor

The electrical characteristics and mechanical stress stability of dual‐gate amorphous InGaZnO thin film transistors (DG a‐IGZO TFTs) were investigated. It is revealed that the TFT operating in DG mode demonstrates superior mechanical reliability compared to one in BG mode. However, although it has the ability to fully self‐recover from a Vth shift of 1.86 V (ΔVth), it still experiences noticeable overall deterioration of electrical characteristics. Conversely, experimental findings indicate that the TFT with an F‐doped active layer exhibits only a significant increase in Ioff under mechanical stress while completely self‐recovering from a mere 0.37 V of ΔVth.