Electrical characteristics of amorphous indium‐tin‐gallium‐zinc‐oxide TFTs under positive gate bias stress

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In this Letter, the authors investigate the electrical characteristics of amorphous indium‐tin‐gallium‐zinc‐oxide (a‐ITGZO) thin‐film transistors (TFTs) under positive gate bias stress (PBS). An as‐prepared a‐ITGZO TFT exhibits a mobility of 26.05 cm 2 /V⋅s, subthreshold swing of 183 mV, threshold voltage of −0.33 V, and on/off ratio of 1.34 × 10 8 . These electrical characteristics deteriorate upon the application of PBS. The proposed experiments and simulations reveal that this deterioration can be attributed to the increase in the density of acceptor‐like conduction band‐tail states and donor‐like Gaussian states within the bandgap of the a‐ITGZO channel material.