10‐3: Self‐aligned top‐gate amorphous ITZO TFTs with high‐k AlOx insulator with Oxygen‐plasma formed source/drain

This work develops self‐aligned top‐gate (SA‐TG) amorphous indium‐tin‐zinc oxide (ITZO) thin‐film transistors (TFT) with high‐k AlOx gate insulator based on oxygen‐plasma formed source/drain technique. The fabricated SA‐TG TFTs based on this technique demonstrate good electrical performance, such as source/drain resistivity of less than 0.005W cm, high field‐effect mobility of 35.2 cm 2 /Vs, and near‐zero turn‐on voltage. Additionally, the SA‐TG high‐k devices exhibiting short‐channel effects only when the channel length is scaled to ~0.8 μm and demonstrated strong stability when subjected to thermal and gate bias stress.