In order to evaluate the influence of defects on the performance of Micro‐LED devices, this paper adopts a finite element simulation method based on semiconductor physics. Firstly, a simulation model of Micro‐LED devices is established, including key components such as electrodes, materials, and structures. Then, defect parameters are set to simulate the optical properties of Micro‐LED devices. Finally, by comparing the simulation results with or without introducing deep level defects, the influence law of these defects on the optical output and electrical characteristics of Micro‐LED devices was revealed.
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Ye et al. (2024) studied this question.
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