In recent years, the gate driven on array (GOA) has become increasingly popular in the a‐Si TFT‐LCD industry. In this study, a new GOA circuit was designed by adjusting the ratio of inverter TFT size, and the operation principle of this new GOA circuit was studied in detail. The K/P point voltage in the GOA circuit was effectively optimized, which could avoid the sharp drop of GOA margin during the reliability testing at high temperature and high humidity (60°C/90%, HTHH). The new GOA circuit was used to drive 55” LCD panels that passed a 1500‐hour HTHH test, with only a 6 V loss in GOA margin compared to the original circuit's 13 V loss. This suggests an improvement in the life of GOA circuits in HTHH environments. This study provides a new route to enhance the GOA circuit properties of a‐Si large‐size TFT‐LCDs.
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Chen et al. (2024) studied this question.
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