One of the micro‐LED direct view display major challenges is to find ways of drastically dropping the cost, for instance, by reducing the micro‐LED size, simplifying the assembly process and improving the assembly yield. In this paper, we present Aledia's GaN‐on‐Si nanowire (NW) LED technology made on standard 8 “Si wafers, scalable to 12” wafers. We will present two components using our NW technology and their use case for the manufacturing of micro‐LED direct view fine pitch display: NWs RGB three color chips obtained using quantum dot (QD) color conversion at chip level. The RGB chips can then be transferred on PCB or glass or TFT substrates for panel manufacturing. The integration within the same chip of a three color RGB chip together with its CMOS driving electronics. Those chips allow to obtain an active‐matrix architecture on any passive backplane without the use of TFT.
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Robin et al. (2024) studied this question.
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