Solution-Processed Perovskite and Oxide-Semiconductor Heterostructure Construction for a High-Performance Ultraviolet Photodetector

Preparation of a perovskite/oxide-semiconductor heterostructure using a solution-processed method is introduced. An amorphous oxide-semiconductor layer, indium gallium zinc oxide (IGZO), is deposited firstly by a facile sol–gel technique. Then, a trihalide perovskite (MAPbI3) film is made by a spin-coating method on the IGZO-coated substrate. Characterization of the materials and heterostructure interface are then performed. The results demonstrate that the bilayer can enhance light absorption enormously in the ultraviolet spectrum compared with a single layer. A photodetector based on the MAPbI3/IGZO heterostructure is then fabricated and characterized. Under the incident light of 254 nm and a 5 V bias, the device shows outstanding performance, including a photo-to-dark current ratio of 5.26 × 103, a responsivity (R) of 2.24 A/W, and a detectivity (D*) of 7.7 × 1010 Jones. All of these parameters are found to be superior to those of a single-layer photodetector. The potential mechanism of property enhancement has been explored utilizing an energy band model. The construction of this perovskite/oxide-semiconductor heterostructure through solution processing offers an approach to achieving high-performance, low-cost optoelectronic devices.