A New Hall Microdevice with Minimal Complexity

A new Hall microdevice with minimal complexity and orthogonal magnetic field activation is suggested. The microsensor contains a rectangular n-type silicon substrate. On the long sides, three ohmic contacts are formed symmetrically and opposite each other. The first two opposite electrodes are connected and the second two are fed in the same way, and third ones are the outputs. The increased sensitivity constituting 40 V/AT is due to the reduced parasitic surface currents. Furthermore, output electrodes are moved out of the area where the supply currents flow. The 80 × 135 μm2 size of the sensor increases the resolution and provides detailed mapping of the magnetic field's topology.