This article presents a three-dimension (3-D) Hall device fabricated on 0.15- <tex-math notation="LaTeX">μ m </tex-math> bipolar-CMOS-DMOS (BCD) platform without additional masks or processes. The 3-D Hall device is designed to detect the three-axis magnetic field in space with lateral and vertical Hall device components. The lateral Hall device features a shallow-trench-isolation (STI) structure and a thin magnetic-sensitive well. The lateral Hall device has an input resistance of 25.1 <tex-math notation="LaTeX">KΩ </tex-math> and its current-related sensitivity is 378 V/AT, with appropriated size and geometry. Its fully isolated structure guarantees high resistance stability for precise measurement. The vertical Hall device utilizes a deep magnetic-sensitive well to provide more space for the rotation of current. By optimizing the position of the Hall electrodes and the width of the device, the input resistance is measured at 10.4 <tex-math notation="LaTeX">kΩ </tex-math> and the current-related sensitivity of the vertical Hall device reaches 161 V/AT. The proposed 3-D Hall device indicates the cost-efficient feasibility of fabricating high-performance Hall sensor chips on the 0.15- <tex-math notation="LaTeX">μ m </tex-math> BCD platform.
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Zhang et al. (2024) studied this question.
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