Switching a SiC MOSFET using a bipolar gate-source voltage causes drift of the gate-source threshold voltage and the on-resistance. This paper describes the setup used for dynamic gate stress tests of discrete SiC MOSFETs as well as the results. It compares the drift across applied gate-source voltages, frequencies, temperatures, and manufacturers.
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Heidemann et al. (2024) studied this question.
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