Observational analysis demonstrates increased switching energy due to gate-switching instability in SiC MOSFETs, highlighting significant performance degradation.
In addition to the well-known bias temperature instability (BTI) phenomena, recently, it has been revealed that SiC MOSFETs show another instability during high-frequency repetitive switching between VGS(L) and VGS(H), referred to as gate-switching instability (GSI). This study shows the increase in switching energy caused by gate-switching instability VGS(th) drift as key performance parameters in electric power conversion systems, especially, when operating in hard-switching mode. A new methodology based on double pulse test was applied at each readout. The results highlighted the significance of the degradation mechanism through its impact on hard-switching applications with high-switching frequency. Therefore ruggedness against GSI plays a pivotal role in the long-term reliable operation of SiC MOSFET devices to ensure durable and efficient power conversion systems.
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Piccioni et al. (2025) studied this question.
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