α-In₂Se₃/MoTe₂ Heterojunction for P-Type Junction Field-Effect Transistors with Ferroelectric Memory Characteristics

Two-dimensional (2D) semiconductors are promising channel materials in field-effect transistors (FETs) to face the challenges at the ultimate scaling limit. N-channel FETs based on 2D materials have been widely explored and exhibit superior performance at the atomic thickness. However, the performance of p-type FETs remains inadequate. Furthermore, the demand for functional integration in electronic devices draws great attention to the study of ferroelectric 2D semiconductors, owing to their combined ferroelectric and semiconductor properties. In this paper, we present a p-channel junction field-effect transistor (PJFET) utilizing MoTe <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> as the p-type channel and α-In <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> Se <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> as the n-type ferroelectric gate, forming a van der Waals PN heterojunction. This strategy enables PJFET with storage functionality and steep subthreshold swing, opening new avenues for innovative transistor-memory architecture.