Design of Arbitrarily Polarized CMOS Terahertz Detector Based on Plasmonic Antenna

In this work, an innovative arbitrarily polarized (AP) THz detector with the assembling of the orthogonally crossed silicon-based plasmonic antenna and the symmetrical MOSFET in one compact unit is proposed and fabricated in standard CMOS technology. The plasmonic antenna is designed as a dual orthogonal structure with both bow-tie and rod characteristics. The experimental results demonstrate that the proposed detector exhibits excellent polarization insensitivity with an axial ratio of 1.3 dB, furthermore, the noise equivalent power (NEP) and responsivity ( <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Rᵥ</tex> ) of the detector are about 60.25 pW/Hz and 1.3 kV/W, while the area occupied is only 180 µm x 180 µm, The presented AP detector offers a novel approach for THz high-density and high-performance array integration.